资料介绍
H9DP32A4JJMCGRCI-MCP Specification 4GB e-NAND Flash + 4Gb Mobile DDR
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.1 / Apr. 2011 1
Preliminary H9DP32A4JJMCGR series e-NAND 4GB(x8) / Mobile DDR 4Gb(x32 2CS)
Document Title CI-MCP 4GB(x8) e-NAND / 4Gb (64Mb x32 2/CS 2CKE) Mobile DDR Revision History
Revision No.
0.1
History
Initial Draft - 4GB e-NAND Flash F-Die - 2Gb mobile DDR A-Die
Draft Date
Apr. 2011
Remark
Preliminary
Rev 0.1 / Apr. 2011
2
Preliminary H9DP32A4JJMCGR series e-NAND 4GB(x8) / Mobile DDR 4Gb(x32 2CS)
FEATURES
[ CI-MCP ] ● Operation Temperature - -25oC ~ 85oC ● Packcage - 153-ball FBGA - 11.5x13mm2, 1.0t, 0.5mm pitch - Lead & H