MB85R1001A概要说明书

MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process
technologies for forming the nonvolatile memory cells.
Because FRAM is able to write high-speed even though a nonvolatile memory,
it is suitable for the log management and the storage of the resume data, etc.
MB85R1001A uses a pseudo-SRAM interface compatible with conventional asynchronous SRAM.
FUJITSU SEMICONDUCTOR
FACT SHEET

NP501-00005-1v0-E
FRAM
MB85R1001A
MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process
technologies for forming the nonvolatile memory cells.
Because FRAM is able to write high-speed even though a nonvolatile memory,
it is suitable for the log management and the storage of the resume data, etc.
MB85R1001A uses a pseudo-SRAM interface compatible with conventional asynchronous SRAM.



■ FEATURES
Bit configuration ：131,072 words × 8 bits
Read/write endurance ：1010 times
Operating power supply voltage ：3.0 to 3.6V
Operating temperature range ：-40℃ to +85℃
Data retention