MB85R256F概要说明书

MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process
technologies for forming the nonvolatile memory cells.
Because FRAM is able to write high-speed even though a nonvolatile memory,
it is suitable for the log management and the storage of the resume data, etc.
MB85R256F uses a pseudo-SRAM interface compatible with conventional asynchronous SRAM.
FUJITSU SEMICONDUCTOR
FACT SHEET

NP501-00010-1v0-E
FRAM
MB85R256F
MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process
technologies for forming the nonvolatile memory cells.
Because FRAM is able to write high-speed even though a nonvolatile memory,
it is suitable for the log management and the storage of the resume data, etc.
MB85R256F uses a pseudo-SRAM interface compatible with conventional asynchronous SRAM.



■ FEATURES
Bit configuration ：32,768 words × 8 bits
Read/write endurance ：1010 times/bit
Peripheral circuit CMOS construction
Operating power supply voltage ：2.7 to 3.6V
Operating temperature range ：-40℃ to +85℃
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