infineon MOSFETS和IGBT的区别

infineon MOSFETS和IGBT的区别
IGBT (Insulated Gate Bipolar Transistor)

1 Differences Between MOSFET and IGBT
1.1 Structure
The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As
can be seen from the structures shown below, the only difference lies in the additional
p-zone of the IGBT. Due to the presence of this layer, holes are injected into the highly
resistive n-layer and a carrier overflow is created. This increase in conductivity of the n-layer
allows to reduce the on-state voltage of the IGBT.

Source
n+
Al


SiO +
2