首页|嵌入式系统|显示技术|模拟IC/电源|元件与制造|其他IC/制程|消费类电子|无线/通信|汽车电子|工业控制|医疗电子|测试测量
首页 > 分享下载 > 工业控制 > AN2385功耗和线性降额因子,硅有限漏电流和脉冲漏电流的MOSFET

AN2385功耗和线性降额因子,硅有限漏电流和脉冲漏电流的MOSFET

资料介绍
AN2385功耗和线性降额因子,硅有限漏电流和脉冲漏电流的MOSFET

AN2385
Application note
Power dissipation and its linear derating factor, silicon
Limited Drain Current and pulsed drain current in MOSFETs

Introduction
Datasheets of the modern power MOSFET devices, either of low voltage or of high voltage,
show in the section entitled "Absolute Maximum Rating" the values of some important
parameters that regard the SOA (safe operating area). As it is well kwown in literature, SOA
is the area that includes all the ID-VDS operating points where the device works in safety
conditions.
The
标签:stm32工业电子
AN2385功耗和线性降额因子,硅有限漏电流和脉冲漏电流的MOSFET
本地下载

评论