AN1232的射频设备的DMOS耐用改善

AN1232的射频设备的DMOS耐用改善

AN1232
Application note
Ruggedness improvement
of RF DMOS devices

Introduction
RF amplifiers often experience impedance mismatch between output and load. Such an
impedance mismatch generates a reflected wave towards the RF power transistor, making a
much more stringent working environment for the transistor. Working conditions grow critical
when the load is disconnected from the output of the RF power transistor, since, in this case,
the refl