High voltage generation for low power large VDD range non volatile memories

High voltage generation for low power large VDD range non volatile memories
High Voltage Generation for Low Power Large VDD
Range Non Volatile Memories

Caroline Papaix*, Jean-Michel Daga*

*"Libraries and Design Tools" Department - ATMEL Rousset, Zone Industrielle,
13106 ROUSSET - FRANCE
cpapaix@atmel.fr



Abstract: The design of embedded non volatile memories, such as EEPROM or
Flash, working under a wide VDD range depending on the battery (typically
1.8V-3.3V), needs specific techniques. Optimization of the charge pump
circuitry and of the current consumption during the write operation are treated
in this paper.




1 Introduction

Because of the physical phenomena involved in the charge and di