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4N600

资料介绍
4N600
Bay Linear
Inspire the Linear Power

N-Channel Field Effect Transistor 4N600(3600)

Description Features
Critical DC Electrical parameters
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These specified at elevated Temp.
devices are particularly suited for high voltage applications Rugged internal source-drain diode
such as automotive and other battery powered circuits where can eliminate the need for external
fast switching, low in-line power loss and resistance
标签:4N6004N600
4N600
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