资料介绍
bfg21wDISCRETE SEMICONDUCTORS
M3D124
BFG21W UHF power transistor
Product specication Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06
Philips Semiconductors
Product specication
UHF power transistor
FEATURES High power gain High efficiency 1.9 GHz operating area Linear and non-linear operation. APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.
2 Top view 1
MSB842
BFG21W
PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter
handbook, halfpage
3
4
Marking code: P1.
Fig.1 Simpl
我要上传