资料介绍
SGA-8343DSSGA-8343(Z) Low Noise, High Gain SiGe HBT
SGA-8343(Z)
LOW NOISE, HIGH GAIN SiGe HBT
Package: SOT-343
Product Description
RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU DirecOptimum Technology tive 2002/95. This package is also manufactured with Matching Applied green moldin
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