资料介绍
eetopIEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 31, NO. 12, DECEMBER 1996
1939
A 2.7-V 900-MHz CMOS LNA and Mixer
Andrew N. Karanicolas, Member, IEEE
Abstruct-A CMOS low-noise amplifier (LNA) and a mixer for RF front-end applications are described. A current reuse technique will be described that increases amplifier transconductance for the LNA and mixer without increasing power dissipation, compared to standard topologies. At 900 MHz, the LNA minimum noise figure (NI?) is 1.9 dB, input third-order intercept point (IIP3) is -3.2 dBm and forward gain is 15.6 dB. With a 1-GHz local oscillator (LO) and a 900-MHz RF input, the mixer minimum double sideband noise figure (DSB NF) is 5.8 dB, IIP3 is -4.1 dBm, and power conversion gain is 8.8 dB. The LNA and mixer, respectively, consume 20 mW and 7
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