资料介绍
The low on-resistance and high current carrying capability of power
MOSFETs make them preferred switching devices in SMPS power
supply design. However, designing with these devices is not as
straightforward as with their bipolar counterparts.
Unlike bipolar transistors, power MOSFETs have a considerable
gate capacitance that must be charged beyond the threshold
voltage, V
GS(TH)
, to achieve turn-on. The gate driver must provide
a high enough output current to charge the equivalent gate capaci-
tance, C
EI
, within the time required by the system design. AN786
Driving Power MOSFETs in High-Current, Switch Mode Regulators
Author: Abid Hussain,
QG
Microchip Technology, Inc.
QGS QGD QOD
DRIVING THE MOSFET
VGS, Gate-to-Source
The low on-resistance and high current carrying capability of power
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