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SiGeC 微波NPN晶体管BFU725F

资料介绍
利用恩智浦半导体最新的SiGeC微波NPN晶体管BFU725F满足对更高频率的趋势,你会得到高开关频率,极高的增益和低噪声。所有这一切简单到使用一个SOT343F包。它是应用高达20GHz的理想解决方案
SiGeC microwave NPN
transistor BFU725F




A perfect match up to 20 GHz
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave
NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise.
All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz.

Key features
Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) The NPN microwave transistor BFU725F delivers an unbeatable
High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB blend of high switching frequency, high gain and very low
at 18 GHz)
标签:NXPSiGeCBFU725F
SiGeC 微波NPN晶体管BFU725F
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