资料介绍
Amp的设计Application Note
Nonlinear Amplifier Design
A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Infineon Silicon-Germanium BFP620 Transistor
Gain = 14.7 dB Very Low Noise Figure = 1.05 dB High Input 3rd-Order Intercept Point = +10 dBm Low Power Consumption, 8.9 mA at 3.0 V Single Supply Voltage (no negative bias required), low parts count Applications: Cellular Handsets for CDMA, WCDMA, UMTS 1 B 2 E 3 C 4 E
Introduction This application note is based directly on a design documented in the Infineon Technologies Application Note 060. This design was used as part of the accuracy verification suite used in the development of the HARBEC nonlinear simulator in GENESYS 7.5. This detailed application information is provided in support of the “SiGe BFP620 Am
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