资料介绍
晶体管模型微波毫米波晶体管器件特性与模型
微波毫米波晶体管器件特性与模型
OMMIC’s GaAs P-HEMT Transistors
杨守军
微波毫米波晶体管器件特性与模型
GaAs P-HEMT Transistors Are Fabricated From the epitaxial Active Layer, Defined by the Mask LI. The ohmic Contact Metal (OH Mask) Makes the Contact With the Active Layer, While the Gate Metal (GM Mask) Creates the shottky Diode. Then the Dielectrics Are Etched (CO Mask), and the Device Is Interconnected With the Other Parts of the Circuit (IN Mask).
微波毫米波晶体管器件特性与模型
一、直流特性
1. FET ON (Vt=-0.9V) DC characteristics
Name Vt Idss Definition Theshold Voltage: Vgs for Ids=1mA/mm at Vds=3V Drain Source current at Vgs=0V and Vds=3V Unit V mA/m m V V mS/mm Scaling ×W ×W Value -0.9 250 -8.0 -4.6 440
Drain+Source to Gate voltage for Vbrgss Ig=1mA/mm (Drain and Source short circuited) Vleak gm Drain+Source to Ga
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