资料介绍
8822AO8822
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description Features
The AO8822 uses advanced trench technology to VDS (V) = 20V
provide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 10V)
operation with gate voltages as low as 1.8V while RDS(ON) < 21m (VGS = 10V)
retaining a 12V VGS(MAX) rating. This device is suitable RDS(ON) < 24m (VGS = 4.5V)
for use as a uni-directional or bi-directional load RDS(ON) < 32m (VGS = 2.5V)
switch, facilitated by its common-drain configuration.
RDS(ON) < 50m (VGS = 1.8V)
Standard Product AO8822 is Pb-free (meets ROHS
& Sony 259