infineon IGBT高效电源模块

infineon IGBT高效电源模块
Efficiency improvement with silicon carbide based power modules
Zhang Xi*, Daniel Domes*, Roland Rupp**
* Infineon Technologies AG, Max-Planck-Strae 5, 59581 Warstein, Germany
** Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany




Abstract
In the recent years, discrete SiC (silicon carbide) based devices have been introduced to the market.
In this paper the utilization of SiC based diodes and switches in power modules will be presented, dis-
cussed and compared with Si-based power modules. Whereas SiC switches have the overall lowest
dynamic losses, they show higher static losses due to the lack of conductivity modulation and the nec-
essary chip size limitations due to the still high SiC base material price. The freq