infineon 650V IGBT 10us短路试验

infineon 650V IGBT 10us短路试验
650V IGBT4: The optimized device for large current modules with
10 s short-circuit withstand time
Andreas Hrtl, Marco Bssler, Martin Knecht, Peter Kanschat
Infineon Technologies AG, Germany




Abstract
This paper presents the new Infineon 650V IGBT4. Designed especially for medium and large current
applications Inom>300A, in comparison with the 600V IGBT3 the device offers a better softness during
switch-off, and a higher blocking voltage capability. The measures used to realize these features were
to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emit-
ter efficiency. As a consequence, also the short-circuit robustness is significantly improved.


was increased by 50%. As a result, the new
1.