资料介绍
infineon IGBT并接 Paralleling of IGBTs
Effective factors for current sharing:
static dynamic
commutation inductance - Lσ
driver - Lwire , ton, toff
device characteristics Vcesat, Tj Tj, tdon, tdoff
Recommendations:
symmetrical design of IGBT current paths (identical stray inductances)
symmetrical design of gate driver (same driver stage, seperate gate resistors,
splitted Rg with appr. 1/3 of it in t