infineon IGBT 5-10kVA控制仿真

infineon IGBT
Experimental and Simulative Investigations of Conducted EMI
Performance of IGBTs for 5 - 10 kVA Converters

Abstract
Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper
presents investigations of conducted EMI on IGBTs in different test circuits. Moreover,
results are explained from a special developed model for prediction of common and
differential mode interferences, that is suitable to determine solutions for a better EMC
through other design around the semiconductor chip. Results and further possibilities are
discussed.

1 Introduction
IGBTs are mainly used in modern switched mode power supplies and power drive systems
of middle power range. Ruggedness, blocking voltages up to 1600 V, high current densities
and high switching frequencies are a