infineon IGBT并行连接

infineon IGBT并行连接
Connecting IGBTs in Parallel (Fundamentals)
1 Introduction

Apart from looking for an IGBT which is designed for a particular power range there is also
the possibility, particularly at high currents, of connecting two or more smaller IGBTs in
parallel.
Noteworthy advantages of this are a more flexible and individual organization of the layout,
the heat sources can be distributed so that higher levels of power loss can be dissipated,
and possibly also cost advantages by comparison with module attachments, depending on
the device type and power.
The disadvantage is the unequal split in losses. The main reason for this lies in the uneven
current split between devices which results from differences in VCEsat, gfs and Vth (variability in
parameter values), which are manufacturer-dependent.