恩智浦宽带晶体管BFU6x0F BFU7x0F

这些新一代设备提供最佳的RF噪声系数增益性能与更低的漏电流。这种性能可以使RF接收器在低功率嘈杂的环境中更好的接收信号。
NXP wideband transistors
BFU6x0F & BFU7x0F




QUBiC4 Si and SiGe:C transistors
for any RF function
These next generation devices offer the best RF noise figure versus gain performance, drawing the
lowest current. This performance allows for better signal reception at low power and enables RF
receivers to operate more robustly in noisy environments.


Key features The devices in this family of 6th (Si) and 7th (SiGe:C) generation
40/110 GHz transition frequency allows for applications RF transistors can be used to perform nearly any RF function.
up to 18 GHz and beyond For example, the BFUx1