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High voltage generation for low power large VDD range non volatile memories

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High voltage generation for low power large VDD range non volatile memories
High Voltage Generation for Low Power Large VDD
Range Non Volatile Memories

Caroline Papaix*, Jean-Michel Daga*

*"Libraries and Design Tools" Department - ATMEL Rousset, Zone Industrielle,
13106 ROUSSET - FRANCE
cpapaix@atmel.fr



Abstract: The design of embedded non volatile memories, such as EEPROM or
Flash, working under a wide VDD range depending on the battery (typically
1.8V-3.3V), needs specific techniques. Optimization of the charge pump
circuitry and of the current consumption during the write operation are treated
in this paper.




1 Introduction

Because of the physical phenomena involved in the charge and di……
标签:HighvoltageVDDrangenonvolatile
High voltage generation for low power large VDD range non volatile memories
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