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首页 > 分享下载 > 模拟IC/电源 > 49.采用 GaAs E-pHEMT 技术的 1.6 - 2.2GHz 低噪声高增益双重放大器设计和性能介绍

49.采用 GaAs E-pHEMT 技术的 1.6 - 2.2GHz 低噪声高增益双重放大器设计和性能介绍

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49.采用 GaAs E-pHEMT 技术的 1.6 - 2.2GHz 低噪声高增益双重放大器设计和性能介绍
Design and Performance of a
1.6-2.2 GHz Low-Noise, High Gain
Dual Amplifier in GaAs E-pHEMT

White Paper


Abstract ― The design and realization of a dual low- II. Balanced Amplifier Design
noise amplifier (LNA) module in the 2 GHz band Figure 1 shows a typical balanced amplifier design.
suitable for balanced receiver front-end application Typically, balanced amplifiers are either composed
is presented. The module was designed to operate entirely of discrete parts or employ partially-integrated
from a 5 V supply with a control voltage for active devices (e.g. dual transistors in a package). Such
convenient adjustment of bias condition for designs are fraught with technical challenges such as
optimum noise figure. The MMIC ……
标签:Avago放大器E-pHEMT
49.采用 GaAs E-pHEMT 技术的 1.6 - 2.2GHz 低噪声高增益双重放大器设计和性能介绍
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