资料介绍
The design and implementation of a high isolation buffer amplifier is presented. This IC uses a two gain stage topology processed in the Avago Technologies Enhancement Mode pHEMT GaAs technology and is packaged in the 8-lead 2mm x 2mm LPCC. It operates preferably from a 5 Volt supply and con-sumes approximately 35mA quiescent current. By varying an external bias resistor, the buffer ampli-fier can deliver maximum output power up to 20 dBm at 2 GHz. It has better than 40dB of input-out-put port isolation and operates from 0.5GHz to 6GHz. The IC features input and output ports matched to 50ohms impedance and provides 20 dB com-pressed gain at 2 GHz. A typical use of the part is for driving a passive mixer LO port from a VCO where high reverse isolation is required by the VCO.
A High Isolation Buffer
Amplifier using Enhancement
Mode PHEMT Technology
White Paper
Abstract is easily frequency pulled by variations in load
impedance. High linearity passive mixers typically
The design and implementation of a high isolation require +17 dBm LO drive levels and present vary-
buffer amplifier is presented. This IC uses a two gain ing load impedances to the LO source. Hence, a need
stage topology processed in the Avago Technologies exists for a buffer amplifier that can raise the VCO
Enhancement Mode pHEMT GaAs technology and output signal to the required power level of the
is packaged in the 8-lead 2 mm x 2 mm LPCC. It mixer, wh
我要上传