资料介绍
An optical photo lithography based 0.15μm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for DC to 85GHz traveling wave amplifer (TWA) and 29-30.5GHz 4.9W power amplifer (PA) are also described as process capability verifcation. TWA shows 8dB of small-signal gain and 12dBm of output power up to 85GHz frequency. PA shows 20dB of small-signal gain and 36.9dBm of output power at 3dB gain compression condition in between 29 and 30.5GHz frequencies. These results verify the process capability to manufacture MMIC devices for applications up to 90GHz.
DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using
an Optical Lithography Based Low Cost PHEMT Process
Kohei Fujii, John Stanback, and Henrik Morkner
White Paper
Abstract Overview of The Mmic Process
An optical photo lithography based 0.15μm GaAs PHEMT Avago's 0.15μm depletion mode pHEMT process utilizes
process and 2mil-substrate technology that enables a double delta-doped AlGaAs/InGaAs/AlGaAs hetero-
high production throughput and low cost is described. junction epitaxial layer optimized to achieve about 575
The developed process achieved Imax=575mA/mm, mA/mm maximum channel current and drain to gate
BVgd=14V, and 753mW/mm of output power density at breakd
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