资料介绍
Many diferent semiconductor technologies are currently being used for power amplifers (PAs) that include a mix of Silicon and GaAs devices – Silicon Bipolar, Silicon MOSFET, GaAs MESFET, GaAs HBT and GaAs pHEMT. Avago uses enhancement-mode pHEMT (E-pHEMT) process for its PA design while most competitors have developed GaAs HBT technology. This paper shows why E-pHEMT technology can provide superior electrical and reliability performance for power amplifer design in wireless communications.Characteristics of E-pHEMT
vs HBTs for PA Applications
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Introduction No need for drain switch or negative voltage supply
Many different semiconductor technologies are currently One of the drawbacks to the conventional depletion-
being used for power amplifiers (PAs) that include a mode pHEMTs, despite the high performance, is the
mix of Silicon and GaAs devices
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