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113.Double low VCEsat (BISS) transistors in SO8

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Double low VCEsat (BISS) transistors in SO8
Double low VCEsat (BISS)
transistors in SO8




2.7 A double low VCEsat (BISS)
transistors to reduce board space
NXP Semiconductors‘ latest double Breakthrough In Small-Signal (BISS) transistors, housed in the
industry standard package SO8, deliver performance and board space benefits to a variety of
power sensitive applications. In addition to the double BISS transistors we offer a portfolio of BISS
loadswitches that combine a low VCEsat (BISS) transistor with a resistor-equipped transistor (RET) in a
single package to reduce component count.


Key features Application example
4 Low collector emitter saturation voltage VCEsat
4 High collect……
标签:NXP晶体管
113.Double low VCEsat (BISS) transistors in SO8
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