061.Ultra-low VCEsat (BISS) transistors in SOT223 (SC-73)

Ultra-low VCEsat (BISS) transistors in SOT223 (SC-73)
Ultra low VCEsat (BISS)
transistors in SOT223 (SC-73)




30 mΩ typical RCEsat in medium power
package
Portable systems demand lower battery voltages and cooler running circuits to increase efficiency.
Ensuring you can find an optimal solution for your application, we offer a broad choice of different
transistor types. Our latest range of 3rd generation BISS (Breakthrough In Small-Signal) transistors
includes dedicated devices housed in the SOT223 (SC-73) package and extends our current
BISS portfolio to some 120 products.


Key features 65 % heat reduction by BISS transistors
} Reduced saturation voltage, VCEsat
} Improved collector current capa