首页|嵌入式系统|显示技术|模拟IC/电源|元件与制造|其他IC/制程|消费类电子|无线/通信|汽车电子|工业控制|医疗电子|测试测量
首页 > 分享下载 > 元件与制造 > 032.Ultra-low VCEsat (BISS) transistors in SOT89 (SC-62)

032.Ultra-low VCEsat (BISS) transistors in SOT89 (SC-62)

资料介绍
Ultra-low VCEsat (BISS) transistors in SOT89 (SC-62)
Ultra low VCEsat (BISS)
transistors in SOT89 (SC-62)




5.3 A continuous collector current
in small medium power package
Lookingtoreducepowerconsumptionandcreatesmallerendproducts?Thenlooknofurtherthan
NXPultralowVCEsat(BISS)transistorsinSOT89(SC-62).Housedinamedium-powerpackage,these
brandnewBISS(BreakthroughInSmall-Signal)transistorsfeaturelowersaturationvoltagesthan
anypreviousBISStransistorgeneration.Theyalsoofferincreasedcollectorcurrentsupto5.3A,
makingthemidealforDC/DCconversioninportableapplicationsandpowermanagementfunctions
focusedonsavingenergy.
Key features 65 % heat reduction by BISS transistors
} Reducedsaturationvoltage,VCEsat
} Improvedcollectorcurrentcapab
标签:NXP晶体管
032.Ultra-low VCEsat (BISS) transistors in SOT89 (SC-62)
本地下载

评论