资料介绍
2SJ217资料 2SJ217
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D
G 1
2
3
1. Gate
我要上传