资料介绍
IRFP250 IRFP250
Data Sheet July 1999 File Number 2330.3
33A, 200V, 0.085 Ohm, N-Channel Features
Power MOSFET 33A, 200V
This N-Channel enhancement mode silicon gate power eld
rDS(ON) = 0.085
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specied level of Single Pulse Avalanche Energy Rated
energy in t
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