射频CMOS集成电路原理和设计-7

射频CMOS集成电路原理和设计-7
CMOS8¤>nO Lecture 6, Oct. 14, 2003
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1. Introduction
1/19
2. Resistors
3. Capacitors
4. Inductors
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1. Ch. 2, Thomas Lee, “The Design of CMOS Radio-Frequency Inte-
grated Circuits,” 1998, reprinted 2001, Cambridge University Press
Introduction
RF circuits generally have many passive components, R, C , and L. 2/19

IC resistors with low self-capacitance and TC are hard to come by
(high voltage coecients, loose tolerance, and a limited range of
values.)




Capacitors with high Q and low TC are available, but tolerance
are relatively loose (e.g. 20% or worse).
Inductors larger than about 10 nH consumes signicant die area
and have relatively poor Q (typically below 1