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振蕩器的設計基礎知識

资料介绍
振蕩器的設計基礎知識Microwave Oscillator Design

Application Note A008

NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only.

Introduction
This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to produce the design equations. These equations are then applied to develop three different oscillators: a 4 GHz bipolar lumped resonator oscillator, a 4 GHz bipolar dielectric resonator oscillator, and a 12 GHz GaAs FET dielectric resonator oscillator.

Theory
Microwave transistors can be used for both amplifier and oscillator applications. From the small signal s parameters of the transistor, the stability factor k can be calculated from:
k= 1 + D s 11 s 22 2 s 21 s 12……
标签:振蕩器的設計基礎知識
振蕩器的設計基礎知識
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