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射頻積體電路製程技術介紹(繁體)

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射頻積體電路製程技術介紹radio frequency

21 Strategies Unlimited 2004 4 13 2.4 , , ( ) 39 2004 6

(radio frequency) 2004 77

38

IC Design 2001, March

( (CMOS) (BiCMOS) (Si BJT) (SiGe) (GaAs MESFET) (HBT) (HEMT) GSM ( IS-54/IS-136 ) (

IC Design 2001, March

39

(Bluetooth) Handyphone system)

PHS(Personal DECT(Digital

)

Enhance Codeless Telecommunications) )

(BiCMOS) (Superheterodyne) ( ) (Deep (GaAs MESFET) ( (T/R Switch) (Low Noise Amplifier) (Power Amplifier) ) (Si Bipolar) (Linearity) (BiCMOS) (Power Added Efficiency PAE) UART (CPU) Sub-Micron CMOS)

(Power Amplifier)

(Direct Conversion) (Low IF) (

(III-V compound semiconductor)

40

IC Design 2001, March

UART

10

(GHz) (III-

V compound semiconductor) (SiGe Epitaxy) (GHz) (III-V compound semiconductor) (silicon) (III-V compound semiconductor)

(L……
标签:射頻積體電路製程技術介紹
射頻積體電路製程技術介紹(繁體)
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