一些关于ESD的国内文章(二)

2006天津大学－衬底触发层叠式NMOS实现混合IO静电保护机制研究第 19 卷 　 第2期 2006 年 4 月

传 感 技 术 学 报
CHIN ES E J OU RNAL O F S ENSORS AND ACTUA TORS

Vol . 19 　 No. 2 Ap r . 2006

Research of Mixed2Voltage I/ O ESD Protection Mechanism Implemented by Substrate2Triggered Technique
W U D i , L I S h u2ron g , YA O S u2y i n g , X U J i an g2t ao
( Ti anj i n Uni versit y A S I C Desi gn Center , Ti anj i n 300072 , Chi na)

Abstract : The subst rate2t riggered technique has an o bvio us imp rove o n ESD level of t he large2dimensio n NMOS devices. The subst rate2t riggered stacked2NMOS device t hat co mbines t he subst rate2t riggered tech2 nique into t he stacked2NMOS device is investigated. Fro m t he academic result s , t he subst rate2t riggered technique can increase ESD ro bust ness of t he stacked2NMOS device in t he mixed2voltage I/ O circuit . F