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A 25-W 5-GHz GaAs FET Amplifie...

资料介绍
A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing SystemIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MTT-29, NO. 6, JUNE 1981

579

A 25-W 5-GHz GaAs FET Amplifier Microwave Landing System
KAZUHIKO HONJO AND YOICHIRO TAKAYAMA, MEMBER, IEEE

for a

A bstract― developed System. hermetically constructed pcrcent exceffent 6°/dB

A 25-W

29-dB

gain 5-GHx

GaAs intemafly 30-W

FET

amplifier

has been Landing F’ET’s 18.5an to Fig. 1. has been with

Lo

LZ

L4

La

which can be used for a transmitter By using simply. AM/PM 1O-W class praeticaf packages, The nmpfifier conversion amplifiers. sealed in ceramic

in the Microwave matched GaAs amplifier

the four-stage

provides of

power output 10/dB,

%-A
Equivrdent circuit

A
for internally matched GaAs FET.

power efficiency for TWT

at 17-dBm power input level. It afsu exhibited approxim……
A 25-W 5-GHz GaAs FET Amplifie...
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