资料介绍
A monolithic HEMT regulated self-biased LNAVII-3
A Monolithic HEMT Regulated Self-biased LNA
K.W. Kobayashi, R. Esfandiari, B. Nelson, K. Minot, W. Jones, M. Biendenbender, R. Lai, K.L. Tan, and J.B. Berenz
TRW Electronic and Technology Division One Space Park Redondo Beach, CA 90278
ABSTRACT
This work benchmarks the first demonstration of a monolithic
HEMT LNA design which incorporates active regulated self-bias. The HEMT LNA bias current can be maintained to within f 3% variation over a process threshold variation (Vgs) of f 0.5 Volt. The bias circuitry regulates the bias current to within 1.5% over a 100°C temperature range. The amplifier has a nominal gain of 10 dB and a noise figure of 2.5 dB over a 1-10 GHz bandwidth. Across several wafers with a threshold voltage spread of 0.5 Volts, the active biasregulated LNA maintains
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