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MMIC Design LecturesIV-3HO

资料介绍
IV-3HOIV-3. MESFET and Devices Parameters
(1) GaAs MESFET 1 x 250 m MESFET
Ci : Gate-to-Source capacitance ~ 0.3 pF ri : Charging resistance of Ci ~ 25 Cgd : Gate-to-Drain capacitance ~ 0.02 pF
Cgd
jωτ gmVe

Ls

Rg

Lg

Ld

V

+
Cgs

Rs
Ri



Cds : Drain-to-Source capacitance ~ 0.05 pF
Rd

rds : Drain-to-Source resistance ~ 600 gm : transconductance ~ 40 mS

gds Cds

fT ≈

gm 2πCi

fT =

1 2πτ c

=

vs 2πL

τc =

L vs

f max

f = T 2

rds 33 x 103 ri L

ICE651 MMIC Design

IV-3-1

IV-3. MESFET and Devices Parameters
(2) Measured S-Parameters

S11 : R-C serial circuit small with zero Cgd
Constant resistant circle

S12 : small because of small Cgd S21 : input voltage btn Cgs at low f
decreased voltage btn Cgs at hier f

S22 : R-C parallel circuit
Constant conductance circle High f : increased……
标签:IV-3HO
MMIC Design LecturesIV-3HO
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