如何提高功放的线性和效率

如何提高功放的线性和效率High Frequency Design

RF POWER AMPLIFIERS

From September 2002 High Frequency Electronics Copyright 2002, Summit Technical Media, LLC

Improving the Linearity and Efficiency of RF Power Amplifiers
Raymond S. Pengelly Cree Microwave
growing number of semiconductor technologies are being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AlGaAs pHEMT, SiC MESFET and AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common, such as transconductance derivatives, capacitance variations, breakdown effects and parasitic resistances. This article overviews the work that has been achieved to date to maximize linearity and efficiency in the most promising technologies, as related specific