GSM Dual-Band PA

GSM Dual-Band PAMIC R

AVE JOU OW

REVIEWED

TECHNICAL FEATURE

IT

OR

IAL B O

R
A

D

AL RN

ED

A HIGH EFFICIENCY, LOW COST SILICON BIPOLAR GSM DUAL-BAND PA MODULE

A

s the wireless communication business continues to expand, there is great demand for reducing the cost of all parts of the systems, and to use semiconductor manufacturing processes and component techniques that can handle very high volume production during the short product cycles of many of the new devices. For a long time, the transceiver blocks in mobile phones have been designed preferably in bipolar silicon technology (RFIC), or BiCMOS if more complexity (integration level) is needed. However, for the output power amplifier (PA), III-V based semiconductor devices are still dominating, either as discrete devices, moderately integrat