RF知识泣血总结

RFIC Question发现问题解决问题
发现问题解决问题
1. Bipolar 和 MOSFET 管的噪声系数分别取决于什么？
Answer：（1）Bipolar transistors, whose base resistance typically
dominates the noise figure; MOSfets exhibit only one primary source of
noise, that generated in the channel. Thus, in submicron
technologies, a reasonable combination of device and bias current may
provide acceptably low noise.
(2)Gate resistance of MOS devices also contributes thermal noise, who
can be minimized by laying out the transistor as a parallel
combination of many narrow device.
取决于不同工艺（GaAs,
CMOS,Bipolar,Bicmos）SiGe和体Si是衬底介质，应用于RFIC设计的工艺有CMOS工
艺、BiCMOS工艺、双极工艺和砷化稼(GaAs)工艺等.在这些技术中，由于砷化稼技
术不能集成低压大规模数字IC和D/A转换器，因此不适合系统集成芯片(SOC)的要求
;尽管基于锗硅工艺的硅异质结器件