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RF Power Amplifier design

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A 700MHz 1W Fully Differential CMOS Class-E Power AmplifierIEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 2, FEBRUARY 2002

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A 700-MHz 1-W Fully Differential CMOS Class-E Power Amplifier
Koen L. R. Mertens and Michiel S. J. Steyaert, Senior Member, IEEE
Abstract―A 700-MHz fully differential class-E CMOS power amplifier for wireless applications has been built toward maximum efficiency. The prototype can deliver 1 W of output power in a 50output impedance. The maximum power-added efficiency (PAE) is measured to be 62%. The obtained efficiency and output power is compared with the class-E amplifiers theory.




Index Terms―Class-E CMOS, drain efficiency, power amplifiers, power-added efficiency.

I. INTRODUCTION ODAY’S power amplifiers are implemented in GaAs [1], HBT, LDMOS, BiCMOS, etc., using conventional biasing schemes. However, more an
RF Power Amplifier design
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