资料介绍
MOSFET器件性能及选用的3个原则
MOSFET器件性能及选用的3个原则
MOSFET器件性能
| | | | | | | | |
| | |IR第三 |MTW20N50E|IR新一代 |FQL |2SK |FQA24N50F|
|参数 |名称 |代 |(TYP) |IRFP460LC|40N50 |2370 |(TYP) |
| | |IRFP460| | | | | |
|[pic](V) | | | | | | | |
| |漏—源击穿 |500 |500 |500 |500 |500 |500 |
| |电压 | | | | | | |
|[pic](V) | | | | | | | |
| |栅源门限电| |2.0~3.0 | |3.0~5.0 |2.5~3.5| |
| |压 | |