MTK6252平台充电方案

PNM723T703E0-2PNM723T703E0-2 N-Channel MOSFET
Description
PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.

D（3）

MOSFET Product Summary
VDS(V) 40 rDS(on)(Ω) 7.5@ VGS=10V VGS(th)(V) 0.5 to 1.5 ID(A) 0.18

G（1）

S（2）

Electrical characteristics per line@25℃( unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Units

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance VDSS IDSS IGSS VGS(th) RDS(ON) ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.05A VGS=10V, ID =0.5A, 40 0.5 0.5 1 1.5 7.5 7.5 V μA μA V

DYNAMIC PARAMETERS
Input Capacitance Outpu