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NTHD4P02F_ONSEMI_79870.pdf

资料介绍
NTHD4P02F_ONSEMI_79870NTHD4P02F Power MOSFET and Schottky Diode
20 V, 3.0 A, Single PChannel with 3.0 A Schottky Barrier Diode, ChipFETt
Features http://onsemi.com MOSFET
V(BR)DSS 20 V RDS(on) TYP 130 mW @ 4.5 V 200 mW @ 2.5 V ID MAX 3.0 A

Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP6 Package with Similar Thermal
Characteristics Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky PbFree Package is Available LiIon Battery Charging High Side DCDC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products
Parameter DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Steady State tv5s Pulsed Drain Current Power Dissipation TJ = 25°C TJ = 85°C TJ = 25°C ID IDM PD Symb
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NTHD4P02F_ONSEMI_79870.pdf
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