一种低功耗宽变增益范围极小噪声恶化的 145GHz LNA英...

一种低功耗宽变增益范围极小噪声恶化的 145GHz LNA英文　第 25 卷第 8 期 　2004 年 8 月

半　导　体　学　报
CH I N ESE JOU RNAL O F SEM ICONDU CTO R S

. 25,N o. 8 Vol A ug. , 2004

A 1145GHz L NA w ith L ow Power, W ide Var iable Ga in Range 3 and Ultra L ow No ise D egrada tion
L in M in , W ang H aiyong , L i Yongm ing and Chen Hongyi
( Institu te of M icroelectron ics, T sing hua U n iversity , B eij ing 　100084, C h ina )

Abstract: A LNA w ith a novel va riab le ga in so lu tion is p resen ted. Com p a red w ith the conven tiona l va riab le ga in so 2 lu tion s of LNA , w h ich have m o re no ise deg rada tion s w hen in low ga in m ode, th is so lu tion g ives abou t 25dB va riab le ga in range in 3dB step s, w h ich w ou ld cau se u ltra low no ise figu re deg rada tion by 013～ 015dB. In add ition, ex tra . pow er con sum p tion is no t needed by th i