资料介绍
1G9-LNAA High IIP3 Low Noise Amplifier for 1900 MHz Applications Using the SiGe BFP620 Transistor
This application note describes the design of a practical LNA
By Gerard Wevers Infineon Technologies
nfineon’s BFP620 is a high-performance, low-cost silicon germanium bipolar transistor housed in a 4-lead ultra miniature SOT343 surface mount package. With a transition frequency (fT) in excess of 70 GHz, this device is ideal for high performance applications, including Low Noise Amplifiers in portable telephones and other battery operated wireless communications devices. The BFP620 offers exceptionally low noise figure, high gain and high linearity at low power consumption levels. The BFP620 rivals more expensive GaAs MESFET and PHEMT devices in performance without requiring a negative supply voltage
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